Teaching

For Eric Pop's most recent teaching, see ExploreCourses.
For most recent handouts, Stanford students should look at Canvas.

Online Tutorials & Short Courses

• What Are 2D Materials Good For?, ICSICT Tutorial (2022)
• (Clarifying) A Few Alternative Facts about 2D Materials, 2D Workshop, Natal Brazil (2019)
• Electrical and Thermal Properties of 2D Materials and Devices, 2D Materials Workshop, U. Minnesota (2016)
• Thermal Resistance in Electronic Devices, Short Course on nanoHUB-U (2016)
• Thermoelectrics 101, Stanford GCEP Symposium (2014)

Stanford EE 101A: Circuits I (coming soon)

• L1 Circuit Abstraction • L2 Resistive Networks • L3 Diode Circuits
• L4 Energy Storage Elements • L5 Network Theorems • L6 MOSFETs • L7 MOSFET Amp DC
• L8 MOSFET Amp Small-Signal • L9 MOSFET Single-Stage Amps • L10 Complex Impedances
• Note: handouts above are from Winter 2024 and do not include in-class annotations

Stanford EE 116: Semiconductor Device Physics

• L1-2 Intro • L3-5 Lattices & Energy Bands • L6-8 Doping & Fermi Level
• L9-11 Drift & Mobility • L12-15 Diffusion • L16-17 Optical Absorption • L18-21 PN diode
• L22-25 PN diode current • L26-27 Short PN diode & capacitance • L28-29 Solar Cell & LED
• L30-32 MOS capacitors & MOSFETs • L33-35 Bipolar Transistors
• Note: handouts above are from Spring 2019 and do not include in-class annotations

Stanford EE 216: Principles and Models of Semiconductor Devices 

(coming soon)

• This is the graduate version of EE 116, covering approximately 50% more material
• Handouts and links are currently available through Canvas

Stanford EE 323: Energy in Electronics

• Graduate course offered for the first time at Stanford in Fall 2014
• Handouts and links are available through Canvas
• Old lectures and handouts from UIUC version archived below under ECE 565

UIUC ECE 340: Semiconductor Electronics

• Intro/Motivation, Crystal Lattices, Energy Bands: L1-L2, L3-L5
• Carrier Statistics, Drift and Diffusion: L6-L8a, L9-L11, L12-L15, L16-L18
  
• P-N Junctions: L19-L22, L23-L26a, L27-L29a [PNprob]
• MS, MOS, and MOSFET: L30-L32a, L33-L34a, L35-36a, Lsupp [MOSprob]
• Bipolar Transistors: L37a, L38-L40a, L41a [BJTprob]

• Principles of Semiconductor Devices, a free online textbook by B. Van Zeghbroeck
• Sister courses: Berkeley EE 130 (Prof. A. Javey) and MIT 6.012 (Prof. J. del Alamo)
• ECE 440 on the nanoHUB (several lectures from Fall 2008)
• Issue on scaling beyond Si CMOS in the IBM J. Res. Dev. (Aug 2006)
• Britney Spears' guide to semiconductor physics

UIUC ECE 565: Energy Dissipation in Electronics (formerly "Hot Chips")

• Intro/motivation: L1L2
• Refs: Balandin (2002), Schelling (2005), Pop (2010)
• Electron & phonon heat capacity, thermal conductivity: L3L4, L5L6L7
• Refs: Debye (1912), Re:Debye (1980), Hall Re:Sommerfeld (1928), Blotekjaer (1970), Olson (1993), Srivastava (2001), Holland (1963), Glassbrenner (1964), Klemens (1993), Kumar (1993)
• Low-dimensional and boundary effects, Landauer conductance: L8L9, L10, L10supp, L11 (Cahill), L12L13
• Refs: Goodson (1999), Swartz (1989), Li (2003), Dames (2004), Schwab (2000), Charlier (2007), Buttiker (1985), Kane (1961), Martin (2009)
• Power, leakage, and temperature in electron devices: L14L15, L16L17
• Refs: Wachutka (1990), Lindefelt (1994), Pop (2005), Tomizawa (1993), Ouyang (2006), Lake (1992), Segal (2002), Roy/Prasad (2000), Zhai (2005), Hanson & Haensch (2006)
• Device, interconnect, package heat transfer: L18L19, L20L21
• Refs: Sunderland (1964), Mautry (1990), Su (1995), Lienhard (2008), Dwyer (1990), Clemente (1993), Rinaldi (2001), Kumar (2005), Pedram (2006), Prasher (2006), Mahajan (2006)
• Final project resources: IEDM format, Sample IEDM paper (Pop), Paper-writing tips (Senturia)
• Old (2009) Wikipedia contributions: IC Cooling, Carrier Scattering, Ballistic Conduction, Thermal Properties of Nanostructures, Interfacial Thermal Resistance, Semiconductor Carrier Mobility

---

updated Jan 2025